1. The role and structure of fast recovery diode
Fast Recovery Diode (FRD) is a diode with good characteristics and short reverse recovery time. It is mainly used in technology switching power supply, PWM pulse width modulator, etc., as high frequency, freewheeling diode or damper diode. .
The internal structure of the fast recovery diode is different from that of a normal PN junction diode. It belongs to a PIN junction diode, which adds a base region I between the P-type and N-type silicon materials to form a PIN silicon wafer. Since the base region is thin and the reverse recovery charge is small, the reverse recovery diode has a short reverse recovery time, a low forward voltage drop, and a high reverse breakdown voltage (withstand voltage value).
Generally, 5~20A fast recovery diode tubes are packaged in TO-220FP plastic. High-power fast recovery diodes above 20A are packaged in TO-3P plastic with metal fins on the top, and fast recovery diodes below 5A are DO-41. Plastic packaging such as DO-15 or DO-27. The figure is the shape of the fast recovery diode.
High-power fast recovery diodes in TO-220 or TO-3P packages are available in single and double tubes. The double-tube pin-out method is further divided into common yang and common yin, as shown in the figure.
2. Commonly used fast recovery diodes?
Commonly used low-power fast recovery diodes are FR series and PFR series, etc. The main parameters are shown in Table 4-45. Commonly used medium and high power fast recovery diodes have RC series, MUR series, CTL series and other main parameters as shown in the table.
Fast Recovery Diode (FRD) is a diode with good characteristics and short reverse recovery time. It is mainly used in technology switching power supply, PWM pulse width modulator, etc., as high frequency, freewheeling diode or damper diode. .
The internal structure of the fast recovery diode is different from that of a normal PN junction diode. It belongs to a PIN junction diode, which adds a base region I between the P-type and N-type silicon materials to form a PIN silicon wafer. Since the base region is thin and the reverse recovery charge is small, the reverse recovery diode has a short reverse recovery time, a low forward voltage drop, and a high reverse breakdown voltage (withstand voltage value).
Generally, 5~20A fast recovery diode tubes are packaged in TO-220FP plastic. High-power fast recovery diodes above 20A are packaged in TO-3P plastic with metal fins on the top, and fast recovery diodes below 5A are DO-41. Plastic packaging such as DO-15 or DO-27. The figure is the shape of the fast recovery diode.
High-power fast recovery diodes in TO-220 or TO-3P packages are available in single and double tubes. The double-tube pin-out method is further divided into common yang and common yin, as shown in the figure.
2. Commonly used fast recovery diodes?
Commonly used low-power fast recovery diodes are FR series and PFR series, etc. The main parameters are shown in Table 4-45. Commonly used medium and high power fast recovery diodes have RC series, MUR series, CTL series and other main parameters as shown in the table.
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