1. Background: According to the prediction of Jingyuan Company, (1) If LED LCD TVs account for 10% of the LCD TV market, the current production capacity of LED chip factories worldwide will be in short supply (this forecast has now been (2) The lighting market is bigger. If the world's incandescent lamps are replaced by LED lights 100%, the LED lighting needs for LED chips is 100 times that of LED LCD TVs, even if 10% Incandescent lamps are replaced by LED lights, and the demand for LED chips is also 10 times that of LED LCD TVs. The more optimistic estimate is that LEDs will enter the lighting in the next 1-2 years.
Therefore, on the one hand, each LED chip company is expanding production, on the other hand, other funds also enter the LED chip industry. For example, Samsung in South Korea has purchased a large number of epitaxial devices MOCVD.
The bottleneck is that the expansion of the epitaxial equipment plant is limited (it is reported that the world's two major MOCVD manufacturers are expected to double capacity by the end of this year), and the sapphire substrate plant has a limited expansion rate (currently, qualified sapphire substrates) The number of manufacturers is very small). The expansion speed of the epitaxial equipment factory and the sapphire substrate factory is far less than the increase in the demand for LED chips for LED lighting. The supply of other chip equipment and raw materials will be tight.
How to expand the capacity of equipment factories and the capacity of raw material plants in the next few years to meet the demand for LED chips for LED lighting?
2. A mitigation method: One of the methods for mitigating high-current-driven LED chips is to develop and produce LED chips that can be driven by large currents in one to two years, so that the luminous flux emitted by one chip is equivalent to several conventional ones. The luminous flux of the LED chip.
The advantages of high current driven LED chips are as follows:
(1) The price equivalent to the LED chip is reduced to a fraction of the original chip, which is more conducive to the promotion of LED lighting. (2) It is equivalent to several times the existing production capacity without increasing the investment of extremely expensive equipment and reducing risks. (3) Increased production capacity of newly expanded equipment.
To more intuitively understand this mitigation approach, a definition of two chip capacities is introduced:
(A) "Chip Capacity".
(B) "lm capacity", that is, the number of lm is used to calculate the capacity of the chip factory, because the requirements of the lighting fixture are calculated using the number of lm (or lux) instead of the number of chips used in the luminaire, which is somewhat The capacity of a power plant is calculated as the amount of electricity generated.
For example, a chip factory's "chip capacity" is: 45 mil chips with a monthly yield of 100 kk.
If each chip is packaged and emits 100 lm of light at 350 mA, it can be said that the plant's "lm capacity" is 10 kkk lm. However, if each chip is packaged to emit 300 lm of light at a higher current drive, it can be said that the plant's "lm capacity" is 30 kkk lm. However, according to the 350 mA LED chip driven by 350 mA, in order to achieve the "lm capacity" of 30 kkk lm, the "chip capacity" required is: a 45 mil chip with a monthly output of 300 kk and 350 mA.
For the above example, this is equivalent to:
(1) The cost per lm of the high-current-driven chip is reduced by 1/3; (2) The "lm capacity" of the chip manufacturer has increased by three times, but the chip production capacity of the chip manufacturer has not increased. , did not increase the huge amount of equipment investment, saving a huge investment in the production of 200 kk of "chip capacity"; (3) also saved the monthly growth of 200 kk 350mA driven chip epitaxial growth and chip processing raw material costs .
This relieves pressure on equipment manufacturers and eases the demand for raw materials, including sapphire substrates.
If you can drive with a larger current (for example, a current of the order of a few amps), the advantage is even greater.
The news that South Korea's Samsung company purchased a large number of epitaxial devices has been cited many times. However, it has not been widely noticed that Samsung is working with others to develop high-current-driven LED chips, and has already made a patent layout at the extension level. By then, not only will Samsung's "chip capacity" of the epitaxial equipment be astonishing, but its "lm capacity" will be even more amazing - several times the "lm capacity" of the LED chip driven by 350mA. Manufacturers without the technology to drive chips with high currents are even more difficult to predict.
3. Development of high-current-driven LED chips It is revealed that Cree's 1.5A current-driven chip is undergoing aging tests, and as of now, only 7% is attenuated in 6000 hours.
We know that LED chips that can be driven with high current must meet the following conditions: (A) epitaxial level, (B) chip level, and (C) package level:
(A) Epitaxial level: The key issue is to solve the problem of quantum efficiency (efficiency droop) of the chip when driving at high current. Some companies are developing ways to address the decline in efficiency. For example, the University of Virginia published the results of the experiment: replacing the undoped GaN barrier layer with a Mg-doped InGaN barrier layer, which is maximized at a current density of 900 A/cm2 (equivalent to driving a 1 mm2 chip with a 9 A current). External quantum efficiency. In contrast, the current high-power 1mm2 LED chip currently on the market has a current density of only 35A/cm2. Recently, the university has publicized their research and development results for high-current-driven, non-polarized LEDs. The University of Virginia also found that for currents flowing in P-GaN laterally, that is, laterally structured LED chips, current congestion Causes additional quantum efficiency degradation.
(B) Chip level (see “China Semiconductor Lighting Industry Development Yearbook (2008)): The following conditions must be met: Effective introduction of large current into the LED chip, uniform current distribution, no current congestion, and excellent heat dissipation performance of the chip.
The 3D vertical structure LED chip is easy to meet the above conditions. The electrode of a 3D vertical structure LED chip has 4 strip electrodes. Therefore, there are 4 current introduction points, that is, the current passes through the N metal respectively. The current introduction point flows into the four strip electrodes and further flows into the LED film, and the current introduced from each current introduction point is equal to 1/4 of the total current. Therefore, the current density near the current introduction point is small, and it is not easy to cause current congestion in the vicinity of the current introduction point. For larger currents, multiple strip electrodes can be used without too much light blocking.
A three-dimensional vertical structure LED chip has an advantage in introducing a large current into a chip.
(C) Package level: The heat generated by the large current must be effectively dissipated.
In short, in order to promote the progress of LED lighting as soon as possible, and to meet the demand for LED chips for LED lighting, on the one hand, we must consider the speed of expansion of chip equipment factories and raw material factories, on the other hand, we must increase LED chips with as little investment as possible. The production capacity of the chip driven by high current can better meet the requirements of these two aspects, and the 3D vertical structure LED chip is more suitable for high current drive!
Therefore, on the one hand, each LED chip company is expanding production, on the other hand, other funds also enter the LED chip industry. For example, Samsung in South Korea has purchased a large number of epitaxial devices MOCVD.
The bottleneck is that the expansion of the epitaxial equipment plant is limited (it is reported that the world's two major MOCVD manufacturers are expected to double capacity by the end of this year), and the sapphire substrate plant has a limited expansion rate (currently, qualified sapphire substrates) The number of manufacturers is very small). The expansion speed of the epitaxial equipment factory and the sapphire substrate factory is far less than the increase in the demand for LED chips for LED lighting. The supply of other chip equipment and raw materials will be tight.
How to expand the capacity of equipment factories and the capacity of raw material plants in the next few years to meet the demand for LED chips for LED lighting?
2. A mitigation method: One of the methods for mitigating high-current-driven LED chips is to develop and produce LED chips that can be driven by large currents in one to two years, so that the luminous flux emitted by one chip is equivalent to several conventional ones. The luminous flux of the LED chip.
The advantages of high current driven LED chips are as follows:
(1) The price equivalent to the LED chip is reduced to a fraction of the original chip, which is more conducive to the promotion of LED lighting. (2) It is equivalent to several times the existing production capacity without increasing the investment of extremely expensive equipment and reducing risks. (3) Increased production capacity of newly expanded equipment.
To more intuitively understand this mitigation approach, a definition of two chip capacities is introduced:
(A) "Chip Capacity".
(B) "lm capacity", that is, the number of lm is used to calculate the capacity of the chip factory, because the requirements of the lighting fixture are calculated using the number of lm (or lux) instead of the number of chips used in the luminaire, which is somewhat The capacity of a power plant is calculated as the amount of electricity generated.
For example, a chip factory's "chip capacity" is: 45 mil chips with a monthly yield of 100 kk.
If each chip is packaged and emits 100 lm of light at 350 mA, it can be said that the plant's "lm capacity" is 10 kkk lm. However, if each chip is packaged to emit 300 lm of light at a higher current drive, it can be said that the plant's "lm capacity" is 30 kkk lm. However, according to the 350 mA LED chip driven by 350 mA, in order to achieve the "lm capacity" of 30 kkk lm, the "chip capacity" required is: a 45 mil chip with a monthly output of 300 kk and 350 mA.
For the above example, this is equivalent to:
(1) The cost per lm of the high-current-driven chip is reduced by 1/3; (2) The "lm capacity" of the chip manufacturer has increased by three times, but the chip production capacity of the chip manufacturer has not increased. , did not increase the huge amount of equipment investment, saving a huge investment in the production of 200 kk of "chip capacity"; (3) also saved the monthly growth of 200 kk 350mA driven chip epitaxial growth and chip processing raw material costs .
This relieves pressure on equipment manufacturers and eases the demand for raw materials, including sapphire substrates.
If you can drive with a larger current (for example, a current of the order of a few amps), the advantage is even greater.
The news that South Korea's Samsung company purchased a large number of epitaxial devices has been cited many times. However, it has not been widely noticed that Samsung is working with others to develop high-current-driven LED chips, and has already made a patent layout at the extension level. By then, not only will Samsung's "chip capacity" of the epitaxial equipment be astonishing, but its "lm capacity" will be even more amazing - several times the "lm capacity" of the LED chip driven by 350mA. Manufacturers without the technology to drive chips with high currents are even more difficult to predict.
3. Development of high-current-driven LED chips It is revealed that Cree's 1.5A current-driven chip is undergoing aging tests, and as of now, only 7% is attenuated in 6000 hours.
We know that LED chips that can be driven with high current must meet the following conditions: (A) epitaxial level, (B) chip level, and (C) package level:
(A) Epitaxial level: The key issue is to solve the problem of quantum efficiency (efficiency droop) of the chip when driving at high current. Some companies are developing ways to address the decline in efficiency. For example, the University of Virginia published the results of the experiment: replacing the undoped GaN barrier layer with a Mg-doped InGaN barrier layer, which is maximized at a current density of 900 A/cm2 (equivalent to driving a 1 mm2 chip with a 9 A current). External quantum efficiency. In contrast, the current high-power 1mm2 LED chip currently on the market has a current density of only 35A/cm2. Recently, the university has publicized their research and development results for high-current-driven, non-polarized LEDs. The University of Virginia also found that for currents flowing in P-GaN laterally, that is, laterally structured LED chips, current congestion Causes additional quantum efficiency degradation.
(B) Chip level (see “China Semiconductor Lighting Industry Development Yearbook (2008)): The following conditions must be met: Effective introduction of large current into the LED chip, uniform current distribution, no current congestion, and excellent heat dissipation performance of the chip.
The 3D vertical structure LED chip is easy to meet the above conditions. The electrode of a 3D vertical structure LED chip has 4 strip electrodes. Therefore, there are 4 current introduction points, that is, the current passes through the N metal respectively. The current introduction point flows into the four strip electrodes and further flows into the LED film, and the current introduced from each current introduction point is equal to 1/4 of the total current. Therefore, the current density near the current introduction point is small, and it is not easy to cause current congestion in the vicinity of the current introduction point. For larger currents, multiple strip electrodes can be used without too much light blocking.
A three-dimensional vertical structure LED chip has an advantage in introducing a large current into a chip.
(C) Package level: The heat generated by the large current must be effectively dissipated.
In short, in order to promote the progress of LED lighting as soon as possible, and to meet the demand for LED chips for LED lighting, on the one hand, we must consider the speed of expansion of chip equipment factories and raw material factories, on the other hand, we must increase LED chips with as little investment as possible. The production capacity of the chip driven by high current can better meet the requirements of these two aspects, and the 3D vertical structure LED chip is more suitable for high current drive!
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